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Low cost and reliability are the main driving forces for the successful commercialization of MEMS devices. One possible way to decrease their cost is shifting to wafer-level MEMS, where the silicon wafer becomes itself part of the package.
PageWafer is the most advanced way to integrate a getter thin film into wafer-to-wafer bonded MEMS devices that need vacuum or a moisture-free gas-filled environment to operate. Exploting SAES' Page getter film technology, which delivers coating thicknesses down to a few microns, PageWafer ensures long term stability of hermetically sealed devices through chemical sorption of all active gases, including H2O, O2, CO, CO2, N2 and H2.
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PageWafer is a silicon, glass, ceramic or germanium wafer with a diameter up to 8", which acts as the cap wafer of the wafer-level MEMS package. The Page film deposited on its surface can be patterned to completely fit MEMS designers' specific requirements, with dimensions of the pattern cells varying from a few hundreds of microns up to millimeters. The getter film can be patterned inside cavities with depths from a few to hundreds of microns, as well as on the flat wafer surface.
Thickness of the getter film is in the range of few microns and can be tailored according to the quantity of gas to be absorbed.
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The Page film is SAES’ patented zirconium alloy, whose composition and morphology are optimized to maximize sorption performance and reduce activation temperature.
PageWafer contributes to make pressure homogeneous along the entire wafer surface, especially in large diameter wafers where conductance problems limit the lowest achievable pressure at the center of the wafer during the MEMS vacuum sealing.
In terms of activation temperatures, PageWafer is compatible with all the major wafer-to-wafer bonding techniques, such as glass frit, anodic, direct fusion and eutectic paste bonding processes.
PageWafer has been proven able to increase the Q-factor up to 100,000 of a vibrating MEMS structure, by enhancing the vacuum level in the wafer-to-wafer bonded MEMS.
Q-factor measurement of resonant inertial sensor using PageWafer
Courtesy Fraunhofer Institut - Itzehoe (D)
(click on the chart to enlarge)
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