
REL-HY & HCRH
Degradation caused by hydrogen in hermetically sealed packages containing gallium-arsenide (GaAs) discrete FETs with Pd or Pt as gate metals is a well-known phenomenon: the noble metal of the gate turns the molecular H2 into atomic H2 that can diffuse inside the semiconductor material and cause a reduction in current and gain of the device.
Rel-Hy®, SAES Getters Group's hydrogen removing film, is an advanced getter solution optimized to fully comply with all the stringent requirements set by microelectronic hermetic packages suffering from hydrogen-induced problems.
Phenomena like gate failure in gallium-arsenide based microelectronic devices, or insulation degradation in super- insulated cryogenic systems, when caused by hydrogen can be solved by the adoption of a getter capable of selectively absorbing this gas.
Through Rel-Hy, SAES Getters provides the market with a remarkably performing getter solution that totally complies with hermetic packages such as:
- GaAs microelectronic packages for microwave and RF
Applications
- Constrained volume dewars
- Hermetic storage containers for hydrogen-sensitive products
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