making innovation happen, together

linkedin.com
hcrc.jpg

HCRH

 

Degradation  caused  by hydrogen  in hermetically  sealed  packages  containing  gallium-arsenide (GaAs)  discrete FETs with Pd or Pt as gate metals is a well-known phenomenon:  the noble metal of the gate turns the molecular H2 into atomic H2 that can diffuse inside the semiconductor material and cause a reduction  in current and gain of the device.

 

High Capacity Rel-Hy® (HCRH),  SAES hydrogen  removing  film, is an advanced  getter solution  optimized  to fully comply with all the stringent  requirements  set by microelectronic hermetic  packages  suffering  from  hydrogen-induced problems.

 

Phenomena  like gate failure in gallium-arsenide based microelectronic devices, or insulation degradation  in super- insulated  cryogenic  systems,  when  caused  by hydrogen  can be solved  by the adoption  of a getter  capable  of selectively absorbing this gas. Through HCRH, SAES provides the market with a remarkably  performing  getter solution that totally complies with hermetic packages.

 

HIGHLIGHTS

  • High sorption capacity per unit of coated surface area
  • Selective sorption of hydrogen
  • No activation required
  • No particules released
  • No organics outgassed
  • Custom designs available
  • Low hydrogen partial pressure achievable

 

APPLICATIONS

  • GaAs microelectronic packages for microwave and RF
  • H2 control in hermetically sealed systems
  • Preventive control of H2O generation in microelectronics
  • Implantable medical devices
  • Hermetic storage containers for hydrogen
  • H2 removal from static gas filled systems
  • H2 control for embrittlement protection

 

FOR MORE PRODUCTS INFORMATION, PLEASE CLICK ON “CONTACT US” AND FILL THE FORM.