HCRH

Degradation  caused  by hydrogen  in hermetically  sealed  packages  containing  gallium-arsenide (GaAs)  discrete FETs with Pd or Pt as gate metals is a well-known phenomenon:  the noble metal of the gate turns the molecular H2 into atomic H2 that can diffuse inside the semiconductor material and cause a reduction  in current and gain of the device.

High Capacity Rel-Hy® (HCRH),  SAES hydrogen  removing  film, is an advanced  getter solution  optimized  to fully comply with all the stringent  requirements  set by microelectronic hermetic  packages  suffering  from  hydrogen-induced problems.

Phenomena  like gate failure in gallium-arsenide based microelectronic devices, or insulation degradation  in super- insulated  cryogenic  systems,  when  caused  by hydrogen  can be solved  by the adoption  of a getter  capable  of selectively absorbing this gas. Through HCRH, SAES provides the market with a remarkably  performing  getter solution that totally complies with hermetic packages.

HIGHLIGHTS

• High sorption capacity per unit of coated surface area
• Selective sorption of hydrogen
• No activation required
• No particules released
• No organics outgassed
• Custom designs available
• Low hydrogen partial pressure achievable

APPLICATIONS

• GaAs microelectronic packages for microwave and RF
• H₂ control in hermetically sealed systems
• Preventive control of H₂O generation in microelectronics
• Implantable medical devices
• Hermetic storage containers for hydrogen
• H₂ removal from static gas filled systems
• H₂ control for embrittlement protection

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