
HCRH
Degradation caused by hydrogen in hermetically sealed packages containing gallium-arsenide (GaAs) discrete FETs with Pd or Pt as gate metals is a well-known phenomenon: the noble metal of the gate turns the molecular H2 into atomic H2 that can diffuse inside the semiconductor material and cause a reduction in current and gain of the device.
High Capacity Rel-Hy® (HCRH), SAES hydrogen removing film, is an advanced getter solution optimized to fully comply with all the stringent requirements set by microelectronic hermetic packages suffering from hydrogen-induced problems.
Phenomena like gate failure in gallium-arsenide based microelectronic devices, or insulation degradation in super- insulated cryogenic systems, when caused by hydrogen can be solved by the adoption of a getter capable of selectively absorbing this gas. Through HCRH, SAES provides the market with a remarkably performing getter solution that totally complies with hermetic packages.
HIGHLIGHTS
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High sorption capacity per unit of coated surface area
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Selective sorption of hydrogen
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No activation required
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No particules released
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No organics outgassed
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Custom designs available
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Low hydrogen partial pressure achievable
APPLICATIONS
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GaAs microelectronic packages for microwave and RF
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H2 control in hermetically sealed systems
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Preventive control of H2O generation in microelectronics
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Implantable medical devices
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Hermetic storage containers for hydrogen
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H2 removal from static gas filled systems
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H2 control for embrittlement protection
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