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REL-HY & HCRH

 

Degradation  caused  by hydrogen  in hermetically  sealed  packages  containing  gallium-arsenide (GaAs)  discrete FETs with Pd or Pt as gate metals is a well-known phenomenon:  the noble metal of the gate turns the molecular H2 into atomic H2 that can diffuse inside the semiconductor material and cause a reduction  in current and gain of the device.

 

Rel-Hy®,  SAES hydrogen  removing  film, is an advanced  getter solution  optimized  to fully comply with all the stringent  requirements  set by microelectronic hermetic  packages  suffering  from  hydrogen-induced problems.

 

Phenomena  like gate failure in gallium-arsenide based microelectronic devices, or insulation degradation  in super- insulated  cryogenic  systems,  when  caused  by hydrogen  can be solved  by the adoption  of a getter  capable  of selectively absorbing this gas.

 

Through Rel-Hy, SAES Group provides the market with a remarkably  performing  getter solution that totally complies with hermetic packages such as:

  • GaAs microelectronic packages for microwave and RF

 

Applications

  • Constrained  volume dewars
  • Hermetic storage containers for hydrogen-sensitive products

 

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